NP80N06MLG, NP80N06NLG, NP80N06PLG
200
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
200
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
150
100
10 V
V GS = 4.5 V
150
100
10 V
V GS = 4.5 V
50
0
Pulsed
NP80N06MLG, NP80N06NLG
50
0
Pulsed
NP80N06PLG
0
0.5
1
1.5
2
0
0.5
1
1.5
2
1000
V DS - Drain to Source Voltage - V
FORWARD TRANSFER CHARACTERISTICS
V DS - Drain to Source Voltage - V
GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
3
100
10
1
0.1
0.01
0.001
T ch = ? 55 ° C
? 25 ° C
25 ° C
75 ° C
125 ° C
150 ° C
175 ° C
V DS = 10 V
2
1
V DS = V GS
0.0001
Pulsed
0
I D = 250 μ A
0
1
2
3
4
-75
-25
25
75
125
175
225
100
V GS - Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
T ch = ? 55 ° C
? 25 ° C
25 ° C
75 ° C
T ch - Channel Temperature - ° C
10
125 ° C
1
150 ° C
175 ° C
V DS = 5 V
Pulsed
0.1
1
10
100
I D - Drain Current - A
Data Sheet D19798EJ1V0DS
5
相关PDF资料
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相关代理商/技术参数
NP82N06PDG-E1-AY 功能描述:MOSFET N-CH 60V 82A TO-263 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds(最大)@ Id, Vgs @ 25° C:180 毫欧 @ 9A,10V Id 时的 Vgs(th)(最大):4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件
NP82N06PDG-E2-AY 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:SWITCHING N-CHANNEL POWER MOS FET
NP82N06PLG 制造商:NEC 制造商全称:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET
NP82N06PLG-E1-AY 制造商:NEC 制造商全称:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET
NP82N06PLG-E2-AY 制造商:NEC 制造商全称:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET
NP82N10PUF 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:MOS FIELD EFFECT TRANSISTOR
NP82N10PUF-E1-AY 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:MOS FIELD EFFECT TRANSISTOR
NP82N10PUF-E2-AY 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:MOS FIELD EFFECT TRANSISTOR